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| MOSFET INCHANGE IRF634 N-channel mosfet transistor Features With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)U 0.45| ;ID=8.1A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25ae SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25ae Total Dissipation@TC=25ae A RATING 250 20 8.1 74 UNIT V V A Ptot Tj Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220 ICO E SEM Electrical Characteristics Tc=25ae ANG INCH W Max. Operating Junction temperature Storage temperature 150 ae ae -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 250 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=0.25mA VGS=10V; ID=5.1A VGS=A 20V;VDS=0 4 450 A 100 V m| nA uA V VDS=250V; VGS=0 IF=8.1A; VGS=0 25 2.0 |
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